Modeling of accumulation MOS capacitors for high performance analog circuits
نویسندگان
چکیده
A physical-based model for MOS capacitors in accumulation is presented, which is able to predict the non-linear distortion accurately. The key idea of this work is to include the polysilicon gate depletion effect in that model. Several test structures based on MOS capacitors in accumulation have been implemented with the aim of validating the model and to explore the potential applications to high performance analog circuits fabricated in pure digital CMOS technologies. The model shows good agreement with experimental results.
منابع مشابه
Modeling of Accumulation MOS Capacitors
A model for MOS capacitors in accumulation is presented, which is able to predict the nonlinear distortion accurately. The key idea of this work is to include the polysilicon gate depletion effect in that model. Several test structures based on MOS capacitors in accumulation have been implemented with the object of validating the model and to explore the potential applications to high performan...
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تاریخ انتشار 2003